Compensating related defects in In-doped bulk CdTe
Identifieur interne : 013569 ( Main/Repository ); précédent : 013568; suivant : 013570Compensating related defects in In-doped bulk CdTe
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Abstract
We report on annealing behaviors of electrical and optical properties of In-doped CdTe to investigate the self-compensation in high-resistivity CdTe. A characteristic luminescence line at 1.5842 eV in high-resistivity In-doped CdTe is found to be due to emissions from bound excitons trapped at compensating related defects, which is ascribed to a Cd-vacancy/indium complex. These defect complexes act as acceptors and are responsible for the self-compensation through the balance between the doped indium donors and the defect complex acceptors. Magneto-optical measurements also support this self-compensation mechanism.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Compensating related defects in In-doped bulk CdTe</title><author><name sortKey="Seto, S" uniqKey="Seto S">S. Seto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ishikawa National College of Technology, Tsubata</s1><s2>Kahoku, Ishikawa 929-0392</s2><s3>JPN</s3><sZ>1 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kahoku, Ishikawa 929-0392</wicri:noRegion></affiliation></author><author><name sortKey="Suzuki, K" uniqKey="Suzuki K">K. Suzuki</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hokkaido Institute of Technology</s1><s2>Teine, Sapporo 006-8585</s2><s3>JPN</s3><sZ>2 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Hokkaido Institute of Technology</wicri:noRegion></affiliation></author><author><name sortKey="Abastillas, V N Jr" uniqKey="Abastillas V">V. N. Jr Abastillas</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of Philippines, Diliman</s1><s2>Quezon City 1101</s2><s3>PHL</s3><sZ>3 aut.</sZ></inist:fA14><country>Philippines</country><wicri:noRegion>Quezon City 1101</wicri:noRegion></affiliation></author><author><name sortKey="Inabe, K" uniqKey="Inabe K">K. Inabe</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Kanazawa University</s1><s2>Kodatsuno, Kanazawa 920-8667</s2><s3>JPN</s3><sZ>4 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kanazawa University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0035852</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 01-0035852 INIST</idno><idno type="RBID">Pascal:01-0035852</idno><idno type="wicri:Area/Main/Corpus">011E66</idno><idno type="wicri:Area/Main/Repository">013569</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium tellurides</term><term>Charge compensation</term><term>Defects</term><term>Doped materials</term><term>Excitons</term><term>Experimental study</term><term>Indium additions</term><term>Photoluminescence</term><term>Semiconductor materials</term><term>Zeeman effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Compensation charge</term><term>Défaut</term><term>Matériau dopé</term><term>Addition indium</term><term>Cadmium tellurure</term><term>Matériau semiconducteur</term><term>Photoluminescence</term><term>Exciton</term><term>Effet Zeeman</term><term>7155G</term><term>7855E</term><term>CdTe:In</term><term>Cd Te</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on annealing behaviors of electrical and optical properties of In-doped CdTe to investigate the self-compensation in high-resistivity CdTe. A characteristic luminescence line at 1.5842 eV in high-resistivity In-doped CdTe is found to be due to emissions from bound excitons trapped at compensating related defects, which is ascribed to a Cd-vacancy/indium complex. These defect complexes act as acceptors and are responsible for the self-compensation through the balance between the doped indium donors and the defect complex acceptors. Magneto-optical measurements also support this self-compensation mechanism.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>214-15</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Compensating related defects in In-doped bulk CdTe</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 9th international conference on II-VI compounds, Kyoto, Japan, 1-5 November 1999</s1></fA09><fA11 i1="01" i2="1"><s1>SETO (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUZUKI (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>ABASTILLAS (V. N. 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All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0035852</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on annealing behaviors of electrical and optical properties of In-doped CdTe to investigate the self-compensation in high-resistivity CdTe. A characteristic luminescence line at 1.5842 eV in high-resistivity In-doped CdTe is found to be due to emissions from bound excitons trapped at compensating related defects, which is ascribed to a Cd-vacancy/indium complex. These defect complexes act as acceptors and are responsible for the self-compensation through the balance between the doped indium donors and the defect complex acceptors. 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